• DocumentCode
    3711508
  • Title

    Short ciruit current improvement of SiGe solar cell in a gallium arsenide phosphide - silicon germanium dual junction solar cell on Si substrate

  • Author

    Xin Zhao;Dun Li;Brianna Conrad;Li Wang;Anastasia H. Soeriyadi;Martin Diaz;Anthony Lochtefeld;Andrew Gerger;Ivan Perez-Wurfl;Allen Barnett

  • Author_Institution
    School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, 2052, Australia
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Light trapping capability is analyzed for the SiGe solar cell in the GaAsP-SiGe tandem device. One-dimensional model predicts an achievable Jsc of 17.46 mA/cm2 below the top cell, with the electrical parameter from quantum efficiency fitting. Experimentally, a Jsc of 15.59 mA/cm2 was achieved from the Si.18Ge.82 cell, with textured SiO2 back surface reflector and a single layer SiNx anti-reflection coating. A step-by-step path to reach the 21 mA/cm2 Jsc is provided.
  • Keywords
    "Silicon germanium","Silicon","Photonics","Optical device fabrication","Optical reflection","Wavelength measurement","Substrates"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356230
  • Filename
    7356230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711508