• DocumentCode
    3711509
  • Title

    Hot-carrier effects in type II heterostructures

  • Author

    Louise C. Hirst;Michael K. Yakes;Chaffra A. Affouda;Christopher G. Bailey;Joseph G. Tischler;Hamidreza Esmaielpour;Vincent R. Whiteside;Ian R. Sellers;Matthew P. Lumb;David V. Forbes;Robert J. Walters

  • Author_Institution
    U. S. Naval Research Laboratory, 4555 Overlook Ave. SW., Washington DC, 20375, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Hot-carrier solar cells have high theoretical limiting efficiency however, absorber materials with slow carrier thermalization remain a development barrier for these devices. In previous studies, charge separation in core-shell colloidal quantum dots has been shown to result in slow carrier relaxation. Charge separation also occurs in III-V heterostructures with type-II band alignments. We characterize hot-carrier effects in InAlAs/InP and InAlAs/InGaAsP quantum well structures, with type-II and quasi-type-II band alignments respectively. InGaAsP is identified as a promising hot-carrier absorber candidate, with thermalization coefficient 1.77±0.12 W.K-1.cm-2, corresponding to limiting solar conversion efficiency >42%, under 2000X.
  • Keywords
    "Indium phosphide","III-V semiconductor materials","Limiting","Heat pumps","Solar heating","Nanostructured materials","Resonant tunneling devices"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356231
  • Filename
    7356231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711509