Title :
3 ?m thick GaSb membrane diodes integrated with CVD diamond heat spreaders for thermally managed TPV cells
Author :
E. J. Renteria;S. J. Addamane;D. M. Shima;C. P. Hains;G. Balakrishnan
Author_Institution :
Center for High Technology Materials, University of New Mexico, Albuquerque, 87106, USA
fDate :
6/1/2015 12:00:00 AM
Abstract :
We demonstrate the integration of 3μm thick GaSb PN junctions with CVD diamond heat spreaders. The GaSb diodes are grown metamorphically on a GaAs substrate, bonded to CVD diamond by a solder process and isolated from the GaAs substrate by wet etching. Electrical characterization shows good diode behavior with a turn on voltage of 0.5 V and a reverse-bias leakage current of 1.12 mA.
Keywords :
"Diamonds","Semiconductor diodes","Substrates","Heating","Gallium arsenide","Surface treatment","Metals"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7356234
