• DocumentCode
    3711514
  • Title

    Device impact of photon recycling and luminescent coupling on InGaP/Si tandems

  • Author

    Zekun Ren;Jonathan P. Mailoa;Zhe Liu;Haohui Liu;Sarah E. Sofia;Nasim Sahraei;Sin Cheng Siah; Fen Lin;Tonio Buonassisi;Ian Marius Peters

  • Author_Institution
    Singapore-MIT Alliance for Research & Technology (SMART), 1 CREATE Way, 138602 Singapore
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We numerically evaluate the device impact of photon re-absorption on InGaP/Si tandem solar cells using a coupled optical-electronic device model. The presented simulation results provide guidelines for designing high performance InGaP/Si tandem device. We find that including the effects of photon recycling (PR) and luminescent coupling (LC) results in a 12.5% increase in optimum top-cell thickness for a two-terminal configuration. Furthermore, PR and LC affect the sensitivity of the tandem´s conversion efficiency to various device parameters. As the InGaP bulk lifetime increases, there is an absolute efficiency increase of up to 0.7% for the two-terminal as well as the four-terminal configuration. Considering PR and LC furthermore reduces the power generation sensitivity to shunting in the two-terminal configuration. For the four-terminal configuration, photon re-absorption has a less significant impact.
  • Keywords
    "Silicon","Photonics","Photovoltaic cells","Resistance","Couplings","Photovoltaic systems"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356236
  • Filename
    7356236