Recombination lifetime estimation at crystalline defects layer induced by SiNx deposition using plasma CVD

The structural properties and carrier recombination properties of crystalline defects layer induced by amorphous hydrogenated silicon nitride (SiNx) passivation films plasma chemical vapor deposition (PECVD) process were investigated. A crystalline defects layer existed on the surface of the silicon substrates. The maximum thickness of crystalline defects layer was approximately 50 nm, which was observed by transmission electron microscopy. This defects layer act as minority carrier recombination center. The recombination lifetimes in the crystalline defects layer were calculated as 10-60 nsec using the effective lifetime before and after crystalline defects layer etching.