Raman spectroscopy study of crystalline damage induced by PECVD SiN

We investigated the crystalline damage induced by SiN passivation film deposited by conventional plasma enhanced chemical vapor deposition using Raman spectroscopy. From Raman peak shift and width, we evaluated the crystalline damage in the Si surface under the SiN film depending on the RF power and gas flow rate. We found the compressive stresses were induced in the Si surface and the stresses were larger with higher RF power and smaller SiH4 gas flow rate. The crystalline damage probed by the Raman spectroscopy could be decreased by reducing the RF power for the deposition.