Effects of stacking passivation structure with interface tuning layer for crystalline Si solar cell applications

We fabricated Y₂O₃-ZrO₂ composition film (YZO) on Al₂O₃ for the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30 cm/s after annealing at 400 °C. High thermal tolerance was confirmed over 600 °C by inserting 2-nm-thick ZrO₂ layer between YZO and Al₂O₃ interface. This result showed ZrO₂ layer work as protecting barrier of Al and Y interdiffusions.