• DocumentCode
    3711660
  • Title

    GaAsP/Si dual-junction solar cells grown by MBE and MOCVD

  • Author

    Tyler J. Grassman;Daniel J. Chmielewski;Santino D. Carnevale;John A. Carlin;Steven A. Ringel

  • Author_Institution
    The Ohio State University, Columbus, 43210, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Monolithic, direct epitaxial GaAs0.75P0.25/Si dual-junction (2J) solar cell structures have been grown via both molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Fabricated test devices show working tandem behavior, with clear voltage addition and spectral partitioning, in both cases. Due to the thermal sensitivity of the MBE-grown tunnel junction structure, growth conditions necessary to maintain 2J activity yielded reduced quality GaAs0.75P0.25 top cell, while the more robust MOCVD-based tunnel junction enabled higher-quality top cell growth, resulting in overall higher performance 2J behavior. These initial prototype cells show promising performance and suggest several definite pathways for further device refinement.
  • Keywords
    "Junctions","Silicon","Computer architecture","Photovoltaic cells","MOCVD","Microprocessors","Molecular beam epitaxial growth"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356384
  • Filename
    7356384
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711660