Title :
Oxide thin-film transistor technology for flexible organic light-emitting diode displays
Author :
Mitsuru Nakata;Hiroshi Tsuji;Yoshihide Fujisaki;Yoshiki Nakajima;Tatsuya Takei;Genichi Motomura;Hirohiko Fukagawa;Toshimitsu Tsuzuki;Takahisa Shimizu;Naoki Shimidzu;Toshihiro Yamamoto
Author_Institution :
NHK Science & Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
Abstract :
This paper describes our recent progress in the development of oxide thin-film transistors (TFTs) for use in flexible organic light-emitting diode (OLED) displays. The bending stability of oxide TFTs was investigated using In-Ga-Zn-O (IGZO) TFTs fabricated on a thin polyimide film. Back-channel-etched (BCE) TFTs on a plastic film using In-Sn-Zn-O (ITZO), which has higher mobility than IGZO, were also developed in an effort to realize future large-sized flexible displays. Subsequent to this development, a flexible OLED display was successfully fabricated using the BCE-ITZO-TFTs.
Keywords :
"Oxide semiconductors","Thin film transistors","Organic light emitting diodes","Polyimides","Substrates","Logic gates","Passivation"
Conference_Titel :
Industry Applications Society Annual Meeting, 2015 IEEE
DOI :
10.1109/IAS.2015.7356876
