3DIC/TSV process developments by printing technologies

We have examined printing technology to be adaptable to TSV forming process such as isolation layer forming and via fill. The result shows good possibility. Isolation layer forming by silica paste fill had been confirmed to adaptable for CD 1.5μm to 15μm. Printing process in vacuum chamber by squeezing followed by centrifugal processing is a candidate even though it should be improved on fill-rate. We chose Nano-Function material for TSV fill which was initially developed for power semiconductor attachment. They filled into via also using vacuum circumstances. We confirmed good results to fill via array by the paste using glass substrate with 50μm pitch, 20-25μm diameter and 100μm depth.