Inverse modeling of an AlGaAs/GaAs HEMT from DC and microwave measurements

This paper deals with the inverse modeling of an on wafer AlGaAs/GaAs HEMT based on DC and microwave measurements. The device employed was first characterized in DC conditions, then the scattering parameters from 0.5 to 50 GHz were measured at maximum transconductance performance. The device was also accurately modeled by means of a linear circuit model. Since no detailed information on the structure was available, we decided to undertake a physical analysis of a test structure performed by the SILVACO Atlas™ software to engage an inverse modeling study. By employing the above listed measurements data and the related circuit model, together with some general process information, we could gain a precious insight on the main features of the device structure as demonstrated by the simulation results.