• DocumentCode
    3713077
  • Title

    Effect of hydrogen dilution on morphology and electronic properties of silicon-germanium films deposited by RF plasma discharge

  • Author

    H.E. Martinez;C. Ospina;A. Kosarev

  • Author_Institution
    Electronics Department, Instituto Nacional de Astrof?sica, ?ptica y Electr?nica, Puebla, M?xico, C.P. 72840
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In this work we study the influence of hydrogen dilution on morphological properties and electronic of SiGe:H films. Surface morphology measured by Atomic Force Microscopy (AFM) technique and temperature dependence of conductivity, together with conductivity measurements in dark and under AM1.5 illumination at room temperature were used for characterization. Dark conductivity and Fermi energy varied from 10-8 Ω-1cm-1 to 10-4 Ω-1cm-1 and from 0.45 to 0.08 eV, respectively, with changing hydrogen dilution from RH =9 to.80.
  • Keywords
    "Hydrogen","Films","Conductivity","Temperature measurement","Morphology","Lighting","Surface morphology"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering, Computing Science and Automatic Control (CCE), 2015 12th International Conference on
  • Type

    conf

  • DOI
    10.1109/ICEEE.2015.7357905
  • Filename
    7357905
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3713077