Experimental analysis of a transconductor-amplifier based on a mi-fgmos transistor

This is an analysis of a common source CMOS transconductor based on a Multiple-input Floating Gate MOS transistor with feedback configuration. This analysis allows to visualize the specific way to find the operating point of the amplifier, when it is used as a transconductor. In this work, both theoretical and experimental results are presented. Here, the problem of improving the theoretical data is discussed. Transconductor cells were manufactured using the TSMC technology for 0.35μm. The data obtained here facilitate the design of complex transconductor based on the use of multiple input floating gate MOS transistor in analog integrated circuits.