Design of a CMOS-based RF-MEMS switch as an alternative charge/discharge mechanism for quasi floating-gate MOS transistors

In this paper a quasi-floating-gate charge/discharge method is presented and a novel application for the widely used membrane-like RF-MEMS switches is proposed as well. The design of a four-beam capacitive MEMS structure is described within the 0.5 microns (2P3M) CMOS technology framework. Furthermore, the device is electromechanically simulated in the COMSOL Multiphysics suite and electrically simulated via a custom SPICE model. Finally, the possible use as an electromechanical switch to provide an initial desired electric potential to the floating gate in a flotating-gate MOS transistor (FGMOS) device is discussed.