DC/DC converter dead-time variation analysis and far-field radiation estimation

This paper presents the dead-time variation analysis and far-field radiation estimation of a DC/DC converter. The critical factors influencing the dead-time variation are identified and their statistical distributions are defined. The statistical distribution of the MOSFET parasitic capacitances is optimized to match the values obtained by measurements. The packaging process variation together with the variation of the printed circuit board properties are identified and transferred into circuit simulator by the response surface methodology (RSM). The RSM models together with the simplified synchronous buck DC/DC converter model is implemented in circuit simulator and Monte Carlo simulation is performed. The dead-time variation is extracted from Monte Carlo simulation results and most significant sources of variation are identified. The switching current extracted from the simulation results is used to estimate variation of the far-field radiation.