Annealing time dependence of zinc oxide thin films memristive behavior

This work focused on the memristive behavior of zinc oxide (ZnO) thin films. ZnO thin films were prepared by sol-gel spin coating technique on the ITO substrate. The deposited thin films were annealed at 300°C in a furnace with variation of annealing time of 30, 60 and 120 minutes. The electrical properties were characterized to obtain the pinched hysteresis loop graph to calculate its Roff/Ron ratio. The sample annealed for 60 minutes has the best switching behavior with highest Roff/Ron ratio of 1.744. The sample also exists in amorphous form as characterized by the X-ray diffraction spectra measurement.