Title :
A Low-Noise 150–210 GHz Detector in 45 nm CMOS SOI
Author :
Uzunkol, Mehmet ; Rebeiz, Gabriel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
Abstract :
This letter presents a G-band detector in a 45 nm silicon-on-insulator CMOS technology. The measured detector responsivity is 3 kV/W at 170-180 GHz with a 3 dB bandwidth of 150-210 GHz. The detector results in a Noise-Equivalent-Power (NEP) of 8-10 pW/Hz1/2 at a bias current of 50-200 μA for an IF of 10 MHz and is well matched with an input return loss > 10 dB at 167-194 GHz. The responsivity and NEP values are close to the best SiGe detectors, and show that advanced CMOS nodes are suitable for ~ 200 GHz imaging arrays.
Keywords :
CMOS integrated circuits; Ge-Si alloys; field effect MIMIC; millimetre wave detectors; silicon-on-insulator; CMOS SOI; G-band detector; NEP values; SiGe; advanced CMOS nodes; bandwidth 150 GHz to 210 GHz; imaging arrays; low-noise detector; noise-equivalent-power values; silicon-on-insulator CMOS technology; size 45 nm; Detector; G-band; imaging; noise-equivalent-power (NEP); responsivity;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2258256
