Title :
Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodes
Author :
Yanan Guo;Yun Zhang;Junxi Wang;Jianchang Yan;Yingdong Tian;Xiang Chen;Lili Sun;Tongbo Wei;Jinmin Li
Author_Institution :
Institute of Semiconductors, Chinese Academy of Sciences No.A35, Qinghua East Road, Haidian District, Beijing P R China
Abstract :
Recently, our group has demonstrated several methods to improve the performance of deep ultraviolet (DUV) LEDs and LDs. A high-quality and crack-free AlN template has been achieved by inserting multiple middle-temperature AlN layers with modulated source flow. Using silicon-doped AlGaN MQWs, the internal quantum efficiency (IQE) has been increased by 41% due to the improvement of crystal and interface quality. An easy-facilitative Al reflector technique has been also proposed to enhance the light extraction efficiency (LEE). We obtained light output power (LOP) of 6.31 mW for the 280-nm LED at 100 mA, and realized optical pumping stimulated emission at 288 nm.
Keywords :
"Aluminum nitride","III-V semiconductor materials","Aluminum gallium nitride","Wide band gap semiconductors","Quantum well devices","Light emitting diodes","Substrates"
Conference_Titel :
Solid State Lighting (SSLCHINA), 2015 12th China International Forum on
Print_ISBN :
978-1-5090-0175-0
DOI :
10.1109/SSLCHINA.2015.7360677
