Title :
Thermal modeling analysis of the IGBT integration shunt model
Author :
Meng Zhaoliang; Yang Yuan; Gao Yong; Xi Gang; Han Liye; Zhang Hongwei
Author_Institution :
School of Automation and Information Engineering, Xi´an University of Technology, China
Abstract :
For an IGBT driver, the current detection and protection function is of great importance. Although the shunt could be cascaded with the emitter of the IGBT to detect the collector´s current without any delay, there would be a significant power consumption. Therefore heat dissipation of the shunt is the key problem to be solved. In this paper, the shunt is integrated in a Direct Bonding Copper (DBC) baseplate to solve the heat dissipation problem. The thermal model of a 1200V/800A IGBT module is developed with the three-dimensional finite element method (3-D FEM) using the ANSYS software package. The simulation results prove that it is feasible to solve the heat dissipation problem by integrating the shunt with the DBC baseplate.
Keywords :
"Insulated gate bipolar transistors","Heating","Finite element analysis","Current measurement","Pins","Welding"
Conference_Titel :
Future Energy Electronics Conference (IFEEC), 2015 IEEE 2nd International
Print_ISBN :
978-1-4799-7655-3
DOI :
10.1109/IFEEC.2015.7361494