Title :
Inductorless and cross-coupled wideband LNA with high linearity
Author :
David Bierbuesse;Pierre Bousseaud;Renato Negra
Author_Institution :
High Frequency Electronics, RWTH-Aachen University, D-52056, Germany
Abstract :
In this paper, the design of a wideband LNA employing simultaneously noise cancellation and a linearisation technique is presented. The designed LNA consists of a cross-coupled common-gate topology for wideband matching and noise cancellation. Also, a linearisation technique is used in order to cancel out third order nonlinearities. The proposed LNA is designed in a 130 nm CMOS technology. It has a simulated gain of 14 dB in the frequency range from 100 MHz to 4.7 GHz. The noise figure (NF) is between 3 dB and 4 dB across this frequency band. The third-order input intercept point IIP3 is simulated to be better than +3.5 dBm. The LNA core consumes 2.4 mW from a 1.2 V supply.
Keywords :
"Transistors","Wideband","Topology","Noise measurement","Linearity","CMOS integrated circuits","Distortion"
Conference_Titel :
Nordic Circuits and Systems Conference (NORCAS): NORCHIP & International Symposium on System-on-Chip (SoC), 2015
DOI :
10.1109/NORCHIP.2015.7364391