Title :
A K band high power amplfier in 180-nm CMOS
Author :
Cheng-Hung Hsieh; Zuo-Min Tsai
Author_Institution :
Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan, 621, R.O.C.
Abstract :
A fully integrated K band high power amplifier was designed and fabricated in 0.18 um CMOS technology. Some design and layout techniques are proposed to reduce the DC bias complexity of this 8-way combined high power amplifier. The measurement result shows that this amplifier achieves 20 dBm saturation output power, 6 GHz 3-dB bandwidth, and flat gain response from 20.4 GHz to 24.1 GHz.
Keywords :
"Power amplifiers","CMOS integrated circuits","Logic gates","Gain","CMOS technology","Semiconductor device measurement","Layout"
Conference_Titel :
Electromagnetics: Applications and Student Innovation Competition (iWEM), 2015 International Workshop on
DOI :
10.1109/iWEM.2015.7365083
