DocumentCode
3718292
Title
Effects of additives on filling blind vias for HDI manufacture
Author
Jia Peng;Yuanming Chen; Chong Wang; Dingjun Xiao;Wei He
Author_Institution
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
fYear
2015
Firstpage
169
Lastpage
172
Abstract
Copper electrodeposition from chloride-containing and chloride-free copper plating solutions was investigated. Effects of carrier, brightener and leveler on the filling power of copper deposits in blind via were investigated by response surface design. Metallurgical microscopy was used to measure the filling power. Design-expert software was used to obtain and analysis the regression equation for the filling power as the response to organic additives. An extra experiment was completed to verify the optimized condition. The results showed that chloride-ion-containing plating solution exhibited a higher filling power, compared to the case without chloride ions. The optimum conditions of each additive were obtained as the concentrations of brightener, leveler and carrier at 0.92 mL/L, 12.7 mL/L and 12.7 mL/L, respectively. The filling power of copper deposits was high at the optimum condition. The filling power of copper deposits for blind via was 97.38%, indicating less difference from that of the model value at 97.45%.
Keywords
"Copper","Filling","Additives","Plating","Response surface methodology","Surface treatment","Ions"
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2015 10th International
Print_ISBN
978-1-4673-9690-5
Type
conf
DOI
10.1109/IMPACT.2015.7365180
Filename
7365180
Link To Document