Title :
Development of packaging technologies for SiC power module
Author :
Chun-Kai Liu; Yu-Lin Chao; Wei Li; Chih-Ming Tzeng; Kuo-Shu Kao; Jing-Yao Chang; Rong-Chang Fang
Author_Institution :
Electronics and Opto-Electronics Laboratories/Industrial Technology Research Institute, Rm.168, Bldg.14, No.195, Sec. 4, Chung Hsing Road, Chutung, Hsinchu 310, Taiwan, R.O.C
Abstract :
In recent years, SiC power semiconductor devices are emerging as alternatives that outperform Si devices by reduce power loss and high operation temperature (>200°C). However, commercial packaging technologies for Si devices are within limited operation temperature (<;150°C). The development of packaging technologies for SiC power module is a critical issue. In this paper, the full SiC power module (SiC MOSFET+ SiC Schottky diode) is developed. Thermal, thermomechanical and electrical characteristics of power module are analyzed. For increase reliability, Cu-Al heavy wire bonding and die bonding with high temperature solder are studied. Finally, the performance of full SiC power module is measured and compared with Si IGBT power module.
Keywords :
"Multichip modules","Silicon carbide","Silicon","Insulated gate bipolar transistors","Wires","Reliability"
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2015 10th International
Print_ISBN :
978-1-4673-9690-5
DOI :
10.1109/IMPACT.2015.7365232
