• DocumentCode
    3718506
  • Title

    A Radiation-Hardened Non-Redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process

  • Author

    Junki Yamaguchi;Jun Furuta;Kazutoshi Kobayashi

  • Author_Institution
    Kyoto Inst. of Technol., Kyoto, Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We propose SLCCFF which is a radiation hardened non-redundant flip-flop in 65 nm SOTB (Silicon On Thin BOX) process. We measured its soft error rates by neutron irradiation. SLCCFF has the stacked structure to prevent soft errors on SOI processes while maintaining smaller delay and power overhead than conventional stacked FFs. Experimental results show that the SLCCFF is about 27x stronger than the standard DFF at 0.4V power supply in the SOTB process. It is about 1000x stronger compared with the standard DFF in the bulk process.
  • Keywords
    "Delays","Radiation effects","Inverters","Neutrons","Error probability","Semiconductor device measurement","MOSFET"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365581
  • Filename
    7365581