• DocumentCode
    3718533
  • Title

    Elimination of Single Event Latch-Up in the ATMEL ATMX150RHA Rad-Hard CMOS 150nm Cell-Based ASIC Family

  • Author

    D. Truyen;E. Leduc;F. Braud

  • Author_Institution
    Technol. &
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents a dual-deep-wells process option to completely eliminate the Single Event Latch-up (SEL)of the ATMEL 150nm CMOS SOI technology. TCAD simulations were performed to investigate the efficiency of this process option versus the doping concentration. The experiments show that the combination of the buried oxide and dual-deep-wells is an effectiveness technique to eliminate the SEL effect.
  • Keywords
    "Doping","Standards","CMOS integrated circuits","Silicon-on-insulator","Semiconductor process modeling","Resistance","Vehicles"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365608
  • Filename
    7365608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718533