• DocumentCode
    3718534
  • Title

    Enhanced Low Dose Rate Sensitivity Analysis of Vertical BJT-STMicroelectronics

  • Author

    Francesco Pintacuda;Marc Poizat;Michele Muschitiello

  • Author_Institution
    STMicroeletronics SRL, Catania, Italy
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Enhanced Low Dose Rate Sensitivity of many BJT-STM transistors have been studied. The devices 2N2222AHR, 2N2907AHR, 2N5401HR, 2N5551HR, 2N3810HR and 2ST3360HR have been tested getting up to TID: 100Krad according to ESCC22900 specification. They have been tested with two different dose rate (10mrad/s and 100mrad/s) in two different biasing conditions (ON/OFF) with the aim of identify or verify the ELDRS effect of Hi-Rel& Rad-Hard BJT vertical transistors. The radiation results obtained for all products showing good performance up to 100Krad and any dose rate effect can be observed.
  • Keywords
    "Radiation effects","Testing","Annealing","Aging","Sensitivity","Bipolar transistors","Qualifications"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365609
  • Filename
    7365609
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718534