DocumentCode :
3718540
Title :
Flash-Based FPGA TID and Long-Term Retention Reliability through VT Shift Investigation
Author :
Jih-Jong Wang;Nadia Rezzak;Durwyn Dsilva;Fengliang Xue;Salim Samiee;Pavan Singaraju;James Jia;Frank Hawley;Esmat Hamdy
Author_Institution :
Microsemi-SOC, San Jose, CA, USA
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
Reliability test results of data retention and total ionizing dose (TID) in 65 nm Flash-based field programmable gate array (FPGA) are reviewed. Long-chain inverter design is recommended for reliability evaluation because it can detect degradations of both programmable and erased Flash cells. All the reliability issues are unified and modeled by one natural decay equation.
Keywords :
"Field programmable gate arrays","Reliability","Mathematical model","Nonvolatile memory","Logic gates","Switches","Threshold voltage"
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
Type :
conf
DOI :
10.1109/RADECS.2015.7365615
Filename :
7365615
Link To Document :
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