DocumentCode
3718540
Title
Flash-Based FPGA TID and Long-Term Retention Reliability through VT Shift Investigation
Author
Jih-Jong Wang;Nadia Rezzak;Durwyn Dsilva;Fengliang Xue;Salim Samiee;Pavan Singaraju;James Jia;Frank Hawley;Esmat Hamdy
Author_Institution
Microsemi-SOC, San Jose, CA, USA
fYear
2015
Firstpage
1
Lastpage
4
Abstract
Reliability test results of data retention and total ionizing dose (TID) in 65 nm Flash-based field programmable gate array (FPGA) are reviewed. Long-chain inverter design is recommended for reliability evaluation because it can detect degradations of both programmable and erased Flash cells. All the reliability issues are unified and modeled by one natural decay equation.
Keywords
"Field programmable gate arrays","Reliability","Mathematical model","Nonvolatile memory","Logic gates","Switches","Threshold voltage"
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN
978-1-5090-0232-0
Type
conf
DOI
10.1109/RADECS.2015.7365615
Filename
7365615
Link To Document