Title :
Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions
Author :
V. Gupta;A. Bosser;G. Tsiligiannis;A. Zadeh;A. Javanainen;A. Virtanen;H. Puchner;F. Saigne;F. Wrobel;L. Dilillo
Author_Institution :
Lab. d´Inf., Univ. de Montpellier, Montpellier, France
Abstract :
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.
Keywords :
"Random access memory","Nonvolatile memory","Ferroelectric films","Testing","Single event upsets","Conferences","Sensitivity"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365617
