• DocumentCode
    3718547
  • Title

    Influence of Neutrons Irradiation on Electrical Traps Existing in GaN-Based Transistors

  • Author

    F. Berthet;S. Petitdidier;Y. Guhel;J. L. Trolet;P. Mary;C. Gaquiere;B. Boudart

  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper shows the impact of low fluence neutrons irradiation on AlGaN/GaN and AlInN/GaN HEMTs. The initial presence of electrical traps seems to play a major role on the evolution of dc electrical characteristics.
  • Keywords
    "Neutrons","Radiation effects","Aluminum gallium nitride","Wide band gap semiconductors","HEMTs","MODFETs","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365622
  • Filename
    7365622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718547