• DocumentCode
    3718549
  • Title

    Investigation of SEGR Cross-Section in Power MOSFETs under Proton Irradiation

  • Author

    Evgenij V. Mitin;Valery G. Malinin

  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The cross-section of single-event gate rupture effect caused by 1 GeV protons is measured in several types of power MOSFETs. The influence of drain-source voltage is observed.
  • Keywords
    "MOSFET","Radiation effects","Protons","Logic gates","Voltage measurement","Atmospheric measurements","Particle measurements"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365624
  • Filename
    7365624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718549