• DocumentCode
    3718564
  • Title

    Neutron-Induced Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage

  • Author

    Juan A. Clemente;Francisco J. Franco;Francesca Villa;Maud Baylac;Pablo Ramos;Vanessa Vargas;Hortensia Mecha;Juan A. Agapito;Raoul Velazco

  • Author_Institution
    Comput. Archit. Dept., Univ. Complutense de Madrid, Madrid, Spain
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.
  • Keywords
    "Neutrons","Random access memory","Single event upsets","Radiation effects","CMOS integrated circuits","Electronic mail","Microcontrollers"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365640
  • Filename
    7365640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718564