DocumentCode :
3718564
Title :
Neutron-Induced Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage
Author :
Juan A. Clemente;Francisco J. Franco;Francesca Villa;Maud Baylac;Pablo Ramos;Vanessa Vargas;Hortensia Mecha;Juan A. Agapito;Raoul Velazco
Author_Institution :
Comput. Archit. Dept., Univ. Complutense de Madrid, Madrid, Spain
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.
Keywords :
"Neutrons","Random access memory","Single event upsets","Radiation effects","CMOS integrated circuits","Electronic mail","Microcontrollers"
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
Type :
conf
DOI :
10.1109/RADECS.2015.7365640
Filename :
7365640
Link To Document :
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