DocumentCode
3718566
Title
Nonuniform Optical Losses in Laser SEE Tests
Author
Dmitry V. Savchenkov;Alexander I. Chumakov;Oleg V. Merkushin;Georgy G. Davydov;Vladimir A. Marfin
Author_Institution
Specialized Electron. Syst., Nat. Res. Nucl. Univ., Moscow, Russia
fYear
2015
Firstpage
1
Lastpage
4
Abstract
Lasers can be used in combination with ions for SEE testing. The most practical technique of such tests is based on the comparison between the SEE cross-section vs. ion LET and the SEE cross-section vs. laser pulse energy. However there can be a significant error in the latter curve since the effective laser energy is not the same over different locations on the chip due to the IC´s metallization nonuniformity. This nonuniformity can be taken into account through the optical beam induced current (OBIC) examination which is considered in this article.
Keywords
"CMOS integrated circuits","Testing","Random access memory","Microprocessors","Ionization","Optical losses","Radiation effects"
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN
978-1-5090-0232-0
Type
conf
DOI
10.1109/RADECS.2015.7365642
Filename
7365642
Link To Document