DocumentCode
3718602
Title
The Impact of Plane-Polarized Unfocused Laser Radiation on Bulk Ionization in Deep-Submicron Modern ICs
Author
P. K. Skorobogatov;G. G. Davydov;A. V. Sogoyan;A. Y. Nikiforov;A. N. Egorov
Author_Institution
Moscow Eng. Phys. Inst., Nat. Res. Nucl. Univ. MEPhI, Moscow, Russia
fYear
2015
Firstpage
1
Lastpage
4
Abstract
Manifestation of the dose rate effects is strongly depends on the laser polarization direction for the ICs, which technology is less than the laser wavelength. There are several approaches to reduce this influence in deep-submicron ICs.
Keywords
"Integrated circuit modeling","Ionization","Radiation effects","Microelectronics","CMOS integrated circuits","Testing"
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN
978-1-5090-0232-0
Type
conf
DOI
10.1109/RADECS.2015.7365678
Filename
7365678
Link To Document