• DocumentCode
    3718604
  • Title

    The Issue of Using Test Dose Rate 10 mrad(Si)/s for ELDRS Prediction in MIL-STD-883-H

  • Author

    Alexander T. Yastrebov;Viacheslav S. Pershenkov;Alexander S. Bakerenkov;Vladislav A. Felitsyn;Alexander S. Rodin;Vladimir V. Belyakov;Vladimir V. Shurenkov

  • Author_Institution
    Moscow Eng. Phys. Inst., Nat. Res. Nucl. Univ. MEPhI, Moscow, Russia
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The validity of MIL STD 883 H test method at dose rate less than 10 mrad(Si)/s is discussed. The prediction capability of conversion model is evaluated at ultra-low dose rates in comparison with standard MIL-STD-883-H.
  • Keywords
    "Degradation","Integrated circuit modeling","Military standards","Radiation effects","Fitting","Bipolar transistors"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365680
  • Filename
    7365680