DocumentCode
3718608
Title
TID and SEGR Radiation Characterisation of European COTS Power MOSFETs with Respect to Space Application Electronics
Author
Michael Wind;Jayasimha V. Bagalkote;Peter Beck;Marcin Latocha;Marc Poizat
Author_Institution
Seibersdorf Labs., Seibersdorf, Austria
fYear
2015
Firstpage
1
Lastpage
3
Abstract
We investigated TID radiation response and SEGR susceptibility of two COTS power MOSFETs by exposing them to Co-60 photons with 100 krad(Si) and various heavy ion fields of LET between 18.5 and 60 MeV mg-1cm-2.
Keywords
"MOSFET","Europe","Logic gates","Laboratories","Semiconductor optical amplifiers","Photonics"
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN
978-1-5090-0232-0
Type
conf
DOI
10.1109/RADECS.2015.7365684
Filename
7365684
Link To Document