Title :
TID Response of Various Field Programmable Gate Arrays and Memory Devices
Author :
J. M. Armani;J. L. Leray;R. Gaillard;V. Iluta
Author_Institution :
LIST, Lab. de Fiabilite et Integration des Capteurs, CEA, Gif-sur-Yvette, France
Abstract :
The Total Ionizing Dose (TID) tolerance of some FPGAs and memory devices has been evaluated. Two FPGAs and five memories of various types and technologies have been irradiated. Results show that the total dose tolerance of the tested FPGAs is around 200 Gy. The SRAM is the most tolerant device with a failure dose level over 2.4 kGy. Two Flash memories were still well-functioning after 1 kGy.
Keywords :
"Field programmable gate arrays","Random access memory","Radiation effects","Lattices","Temperature measurement","Flash memories","Cameras"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365686
