• DocumentCode
    3718610
  • Title

    TID Response of Various Field Programmable Gate Arrays and Memory Devices

  • Author

    J. M. Armani;J. L. Leray;R. Gaillard;V. Iluta

  • Author_Institution
    LIST, Lab. de Fiabilite et Integration des Capteurs, CEA, Gif-sur-Yvette, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The Total Ionizing Dose (TID) tolerance of some FPGAs and memory devices has been evaluated. Two FPGAs and five memories of various types and technologies have been irradiated. Results show that the total dose tolerance of the tested FPGAs is around 200 Gy. The SRAM is the most tolerant device with a failure dose level over 2.4 kGy. Two Flash memories were still well-functioning after 1 kGy.
  • Keywords
    "Field programmable gate arrays","Random access memory","Radiation effects","Lattices","Temperature measurement","Flash memories","Cameras"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365686
  • Filename
    7365686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718610