Title :
Classification and Comparative Evaluation of PV Panel-Integrated DC–DC Converter Concepts
Author :
Kasper, Matthias ; Bortis, Dominik ; Kolar, Johann Walter
Author_Institution :
Power Electron. Syst. Lab., Swiss Fed. Inst. of Technol. Zurich, Zurich, Switzerland
Abstract :
The strings of photovoltaic panels have a significantly reduced power output when mismatch between the panels occurs, as, e.g., caused by partial shading. With mismatch, either the panel-integrated diodes are bypassing the shaded panels if the string is operated at the current level of the unshaded panels, or some power of the unshaded panels is lost if the string current is reduced to the level of the shaded panels. With the implementation of dc-dc converters on panel level, the maximum available power can be extracted from each panel regardless of any mismatch. In this paper, different concepts of PV panel-integrated dc-dc converters are presented and their suitability for panel integration is evaluated. The buck-boost converter is identified as the most promising concept and an efficiency/power density ( η- ρ) Pareto optimization of this topology is shown. Based on the optimization results, two 275 W converter prototypes with either Silicon MOSFETs with a switching frequency of 100 kHz or gallium nitride FETs with a switching frequency of 400 kHz are designed for an input voltage range of 15 to 45 V and an output voltage range of 10 to 100 V. The theoretical considerations are verified by efficiency measurements which are compared to the characteristics of a commercial panel-integrated converter.
Keywords :
DC-DC power convertors; III-V semiconductors; Pareto optimisation; elemental semiconductors; gallium compounds; photovoltaic power systems; power MOSFET; silicon; wide band gap semiconductors; DC-DC converter concept; GaN; PV panel; Pareto optimization; Si; buck boost converter; frequency 100 kHz; frequency 400 kHz; gallium nitride FET; panel integrated diode; partial shading; photovoltaic panel; power 275 W; silicon MOSFET; voltage 10 V to 100 V; voltage 15 V to 45 V; Gallium nitride; Inverters; Microwave integrated circuits; Power generation; Silicon; Temperature dependence; Topology; GaN transistors; pareto optimization; photovoltaic (PV) panel-integrated dc–dc converter; prototype comparison;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2013.2273399