Title :
300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio
Author :
Zhe Xu ; Jinyan Wang ; Yong Cai ; Jingqian Liu ; Zhen Yang ; Xiaoping Li ; Maojun Wang ; Zhenchuang Yang ; Bin Xie ; Min Yu ; Wengang Wu ; Xiaohua Ma ; Jincheng Zhang ; Yue Hao
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
300°C operation of a normally-off AlGaN/GaN metal-oxide semiconductor field-effect transistor (MOSFET) is successfully demonstrated, which is fabricated using a self-terminating gate recess etching technique. At 300°C, by employing a 15 nm-thick Al2O3 as the gate dielectric deposited by atomic layer deposition, the fabricated normally-off MOSFET exhibits a threshold voltage (Vth) of 3.2 V, a low off-state leakage current of ~10-7 A/mm and a low forward gate leakage current of ~10-7 A/mm. Thus, a high on/off current ratio of ~ 106 is obtained. Furthermore, the normally-off MOSFET also exhibits small variations in terms of its Vth from room temperature to 300°C with a maximum relative variation of 6.7% in a such temperature range. These results make this normally-off AlGaN/GaN MOSFET very promising for high-temperature digital electronics.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; atomic layer deposition; etching; gallium compounds; leakage currents; wide band gap semiconductors; AlGaN-GaN; atomic layer deposition; gate dielectric deposition; high on-off current ratio; high-temperature digital electronics; low forward gate leakage current ratio; low off-state leakage current ratio; metal-oxide semiconductor field-effect transistor; normally-off MOSFET; self-terminating gate recess etching technique; size 15 nm; temperature 293 K to 298 K; temperature 300 degC; voltage 3.2 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.3928