DocumentCode :
3720877
Title :
Modeling of Schottky barrier diode millimeter-wave multipliers at cryogenic temperatures
Author :
Tom K. Johansen;Oleksandr Rybalko;Vitaliy Zhurbenko;Sean Bowen;Jeffrey Hesler;Jan H. Ardenkjaer-Larsen
Author_Institution :
Department of Electrical Engineering, Technical University of Denmark, Kgs. Lyngby, Denmark
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K. The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees.
Keywords :
"Schottky diodes","Temperature","Schottky barriers","Solid modeling","Cryogenics"
Publisher :
ieee
Conference_Titel :
Microwave and Optoelectronics Conference (IMOC), 2015 SBMO/IEEE MTT-S International
Type :
conf
DOI :
10.1109/IMOC.2015.7369088
Filename :
7369088
Link To Document :
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