DocumentCode :
3721048
Title :
Sizing SiC storage inverters for fast grid frequency support
Author :
Anderson Hoke;Kevin Bennion;Vahan Gevorgian;Sudipta Chakraborty;Eduard Muljadi
Author_Institution :
National Renewable Energy Laboratory, Golden, Colorado, USA
fYear :
2015
Firstpage :
328
Lastpage :
333
Abstract :
As wind and solar displace synchronous generators whose inertia stabilizes the AC grid frequency on fast time scales, it has been proposed to use energy storage systems (ESSs) to mitigate frequency transient events. Such events require a rapid surge of power from the ESS, but they occur only rarely. The high temperature tolerance of SiC MOSFETs and diodes presents an opportunity for innovative ESS inverter designs. Herein we investigate a SiC ESS inverter design such that the SiC device ratings are obeyed during mild frequency events but are exceeded during rare, major events, for a potentially more economical inverter design. In support of this proposal we present: 1. An analysis of four years of grid frequency events in the U.S. Western Interconnection. 2. A switch-level ESS inverter simulation using SiC devices with detailed loss estimates. 3. Thermal analysis of the SiC power modules during a worst-case frequency event, showing that the modules can likely withstand the brief overcurrent. This analysis supports the conclusion that it may be advantageous for economical designs (acknowledging the increased risks) to undersize the SiC switches when designing inverters to perform active power control for grid frequency support. Such a strategy may result in SiC-based designs being more competitive with less costly silicon IGBT-based designs.
Keywords :
"Inverters","Silicon carbide","Solid modeling","MOSFET","Semiconductor device modeling","Frequency measurement","Heat sinks"
Publisher :
ieee
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
Type :
conf
DOI :
10.1109/WiPDA.2015.7369262
Filename :
7369262
Link To Document :
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