DocumentCode
3721067
Title
High frequency eGaN monolithic half bridge IC based 12 VIN to 1 VOUT point of load converter
Author
David Reusch
Author_Institution
Efficient Power Conversion Corporation, El Segundo, CA USA
fYear
2015
Firstpage
371
Lastpage
376
Abstract
Power converters are constantly trending towards higher efficiency, higher power density, higher switching frequency, and higher output current. Rapidly maturing gallium nitride (GaN) technology can meet these demands, and in this paper high performance 12 VIN to 1 VOUT eGaN monolithic half bridge IC based point-of-load (POL) buck converters will be demonstrated at output currents up to 40 A and switching frequencies up to 4 MHz.
Keywords
"Frequency conversion","Switches"
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
Type
conf
DOI
10.1109/WiPDA.2015.7369282
Filename
7369282
Link To Document