DocumentCode
3721072
Title
High power density single phase inverter using GaN FETS and active power decoupling for Google little box challenge
Author
Ahmed S. Morsy;Michael Bayern;Prasad Enjeti
Author_Institution
Department of Electrical & Computer Engineering, Texas A&M University, TAMU, College Station, TX, USA
fYear
2015
Firstpage
323
Lastpage
327
Abstract
This paper presents a comparison between mitigation techniques for double line frequency ripples in single phase micro-inverters based on GaN FETs. A topology based on an auxiliary DC-AC stage is adopted based on optimizing both power density and efficiency to achieve the pressing needs for the next generation of micro-inverters as announced by Google´s little box challenge. An accurate yet simple control algorithm is proposed that provides a ripple-free DC current. Experimental results demonstrate the effectiveness of the presented topology and control algorithm to achieve high power density micro-inverter rated at 2kW.
Keywords
"Capacitors","Inverters","Gallium nitride","Field effect transistors","Density measurement","Power system measurements","Topology"
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
Type
conf
DOI
10.1109/WiPDA.2015.7369287
Filename
7369287
Link To Document