• DocumentCode
    3721077
  • Title

    Power switching transistors based on GaN and AlGaN channels

  • Author

    Sanyam Bajaj;Ting-Hsiang Hung;Fatih Akyol;Sriram Krishnamoorthy;Sadia Khandaker;Andrew Armstrong;Andrew Allerman;Siddharth Rajan

  • Author_Institution
    Department of Electrical and Computer Engineering The Ohio State University, Columbus, Ohio 43210, USA
  • fYear
    2015
  • Firstpage
    16
  • Lastpage
    20
  • Abstract
    We investigate Al2O3/AlGaN interface in GaN MOSHEMTs to engineer channel mobility and threshold voltage suitable for power switching applications. Using oxygen-plasma and annealing treatments, we find the optimal window for high mobility and threshold voltage. Next, we discuss the power switching figure of merit of high composition AlGaN based HEMTs and their potential to achieve large threshold voltages. Finally, we characterize the electrical properties of the interface between Al2O3/high composition Al0.7Ga0.3N, and measure the conduction band offset of approximately 1 eV with a low positive interface fixed charge density of +2.5 × 1012 cm-2.
  • Keywords
    "Aluminum gallium nitride","Wide band gap semiconductors","Gallium nitride","Handheld computers","Threshold voltage","Aluminum oxide","HEMTs"
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
  • Type

    conf

  • DOI
    10.1109/WiPDA.2015.7369292
  • Filename
    7369292
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3721077