DocumentCode :
3721084
Title :
Influences of DBC metal layout on the reliability of IGBT power modules
Author :
Tian Tian;Lin Liang;Wei Xin;Fang Luo
Author_Institution :
School of Optical and Electronic Information, Huazhong University of Sci& Tech, Wuhan, China
fYear :
2015
Firstpage :
166
Lastpage :
169
Abstract :
This paper presents a study of the influences of DBC metal trace layout on the reliability of the high power IGBT module. The research is conducted on a seven-layer IGBT package model using finite element analysis simulation. A parametric study is carried out at different temperatures to simulate the thermal-cycling scenario. It shows in simulation that both total deformation and thermal stress are not balanced even at the symmetrical edges of the module. The stress is related to the metal trace area on the DBC, and larger metal area results in higher thermal stress. Thermal-cycling experiment results verify the analysis to a certain extent. With this knowledge, the paper proposes an improved layout by adding grids to the metal area. The new design can reduce thermal stress and achieve higher reliability of the module.
Keywords :
"Stress","Metals","Layout","Reliability","Strain","Insulated gate bipolar transistors","Thermal stresses"
Publisher :
ieee
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
Type :
conf
DOI :
10.1109/WiPDA.2015.7369299
Filename :
7369299
Link To Document :
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