• DocumentCode
    3721092
  • Title

    HV GaN reliability and status

  • Author

    Sameh G. Khalil;Shyam Hardikar;Steffen Sack;Eric Persson;Mohamed Imam;Tim McDonald

  • Author_Institution
    PMM Division, Infineon Technologies, El Segundo, CA
  • fYear
    2015
  • Firstpage
    21
  • Lastpage
    23
  • Abstract
    In this paper the reliability requirements to qualify High Voltage (HV) GaN technologies are discussed. A multi-faceted methodology that is derived from the target application profile is used to assure that the device will perform reliably for the specified lifetime in the field. Whether the qualification requirements of GaN technology need to exceed the standard JEDEC requirements or not depends on the activation energies and acceleration factors of the degradation mechanisms associated with a given technology, as well as the target application profile. The discussion in this paper addresses the topic of qualifying GaN technologies and the need for a comprehensive approach to reliability assessment that might exceed the JEDEC standards.
  • Keywords
    "Reliability","Gallium nitride","Qualifications","Standards","Acceleration","Silicon","Degradation"
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
  • Type

    conf

  • DOI
    10.1109/WiPDA.2015.7369307
  • Filename
    7369307