DocumentCode
3721092
Title
HV GaN reliability and status
Author
Sameh G. Khalil;Shyam Hardikar;Steffen Sack;Eric Persson;Mohamed Imam;Tim McDonald
Author_Institution
PMM Division, Infineon Technologies, El Segundo, CA
fYear
2015
Firstpage
21
Lastpage
23
Abstract
In this paper the reliability requirements to qualify High Voltage (HV) GaN technologies are discussed. A multi-faceted methodology that is derived from the target application profile is used to assure that the device will perform reliably for the specified lifetime in the field. Whether the qualification requirements of GaN technology need to exceed the standard JEDEC requirements or not depends on the activation energies and acceleration factors of the degradation mechanisms associated with a given technology, as well as the target application profile. The discussion in this paper addresses the topic of qualifying GaN technologies and the need for a comprehensive approach to reliability assessment that might exceed the JEDEC standards.
Keywords
"Reliability","Gallium nitride","Qualifications","Standards","Acceleration","Silicon","Degradation"
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
Type
conf
DOI
10.1109/WiPDA.2015.7369307
Filename
7369307
Link To Document