Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules

This presents a PCB-based Rogowski current sensor design for the purpose of shortcircuit protection for 1.7 kV SiC MOSFET modules. Firstly, the paper shows that using the DeSat protection method for SiC MOSFET protection is not as effective as that in conventional IGBT applications. Therefore, a direct measurement of device switching current is proposed to achieve shortcircuit protection. The Rogowski-coil-based current sensor is selected among several high-bandwidth candidates for its better overall performance. Then the PCB-based Rogowski coil and its signal processing circuit design are shown in the paper. Finally, experimental results validate that the designed sensor has good performance in both accuracy and bandwidth when compared to a commercial Rogowki probe.