Title :
A high temperature comparator in CMOS SiC
Author :
A. Rahman;K. Addington;M. Barlow;S. Ahmed;H. A. Mantooth;A. M. Francis
Author_Institution :
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Abstract :
This paper demonstrates the first reported high temperature voltage comparator in CMOS silicon carbide. The comparator was designed in a 1.2 μm CMOS SiC process and has been tested for a voltage supply of 12 V to 15 V. The rail to rail voltage comparator has been tested up to 450°C with rise and fall times of 31 ns and 22 ns respectively, and positive and negative propagation delays of 108 ns and 107 ns respectively.
Keywords :
"Silicon carbide","Propagation delay","Field effect transistors","CMOS integrated circuits","Photonic band gap","Hysteresis"
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
DOI :
10.1109/WiPDA.2015.7369323
