Title :
Wide bandgap semiconductor power devices for energy efficient systems
Author_Institution :
Rensselaer Polytechnic Institute, Troy, NY 12180-3590 U.S.A.
Abstract :
We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.
Keywords :
"Silicon carbide","Gallium nitride","Silicon","MOSFET","Insulated gate bipolar transistors","Performance evaluation","HEMTs"
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
DOI :
10.1109/WiPDA.2015.7369328
