DocumentCode
3721113
Title
Wide bandgap semiconductor power devices for energy efficient systems
Author
T. Paul Chow
Author_Institution
Rensselaer Polytechnic Institute, Troy, NY 12180-3590 U.S.A.
fYear
2015
Firstpage
402
Lastpage
405
Abstract
We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.
Keywords
"Silicon carbide","Gallium nitride","Silicon","MOSFET","Insulated gate bipolar transistors","Performance evaluation","HEMTs"
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
Type
conf
DOI
10.1109/WiPDA.2015.7369328
Filename
7369328
Link To Document