• DocumentCode
    3721795
  • Title

    Development of new gas sensors based on oxidized galinstan

  • Author

    Mahnaz Shafiei;Nunzio Motta;Faegheh Hoshyargar;Anthony P. O´Mullanc

  • Author_Institution
    Institute for Future Environments and School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology (QUT) Brisbane, QLD 4001, Australia
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    For the first time, we have fabricated and tested conductometric sensors based on oxidized liquid galinstan towards NO2 and NH3 gases at low operating temperatures. Galinstan based films on silicon substrates have been studied with two different loadings. Surface morphology of the films was investigated by means of field emission scanning electron microscopy (FESEM). The sensor with higher galinstan loading showed a better sensitivity, which can be attributed to a higher surface area, as confirmed by SEM. At 100°C, a detection limit as low as 1 and 20 ppm was measured for NO2 and NH3, respectively.
  • Keywords
    "Temperature sensors","Films","Gas detectors","Liquids","Temperature measurement","Image sensors"
  • Publisher
    ieee
  • Conference_Titel
    SENSORS, 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/ICSENS.2015.7370331
  • Filename
    7370331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3721795