Amorphous indium gallium zinc oxide thin film-based ozone sensors

Gas sensors with good performance should exhibit characteristics such as high sensitivity, low energy consumption, and low fabrication costs. A metal-oxide semiconductor material, amorphous indium-gallium-zinc-oxide (InGaZnO4, has a good stability-IGZO), is with potential for use in gas sensor. It can be used for continuously measurement of the gas content. To obtain more sensitivity, parameters of UV light is measured. The sensitivity is significantly improved at low light intensity. And stability was also determined, that reduce the light intensity does not reduce the stability of sensors.